High Productivity and Precision
ASML's TWINSCAN NXT:870 incorporates state-of-the-art optics and the latest NXT platform technology to deliver exceptional performance in semiconductor lithography. With a resolution capability of 110 nm and below, this system is optimized for volume production of 300 mm wafers. The integration of a dual-stage KrF light source ensures precise and efficient operation, allowing for the production of up to 330 300-mm wafers per hour. The utilization of highly line-narrowed 40 & 60 W KrF lasers, coupled with advanced optical transmission, guarantees high productivity at a low operational cost.
Enhanced Optics for Superior Imaging
The TWINSCAN NXT:870 system features a variable 0.80 NA 248 nm 865 projection lens, which enables the achievement of minimal aberrations and tight focal planes. This superior optic design ensures excellent distortion control, with annular distortion maintained at or below 10 nm. By leveraging the imaging power of a ZEISS Starlith lens combined with AERIAL II and optional QUASAR XL illuminator technology, the NXT:870 system extends the capabilities of KrF technology to deliver exceptional imaging performance for demanding semiconductor applications.
Unmatched Imaging Performance and Precision
ASML's TWINSCAN NXT:870 excels in imaging performance, offering a ≤ 7.5 nm matched-machine full-wafer-coverage overlay. With the inclusion of the PARIS sensor, the system provides customers with the ability to precisely set up and monitor imaging parameters, ensuring unparalleled accuracy and control. The system's innovative dual-stage technology further enhances imaging capabilities and maintains high throughput levels across a wide range of resist sensitivities, making it a reliable and efficient solution for semiconductor fabrication.
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